Vishay TrenchFET Type P-Channel TrenchFET Power MOSFET, 1.7 A, 60 V Enhancement, 3-Pin SOT-23

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RS Stock No.:
180-7397
Mfr. Part No.:
SQ2309ES-T1_GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

TrenchFET Power MOSFET

Maximum Continuous Drain Current Id

1.7A

Maximum Drain Source Voltage Vds

60V

Series

TrenchFET

Package Type

TO-236

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.335Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2W

Typical Gate Charge Qg @ Vgs

8.5nC

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

AEC-Q101, IEC 61249-2-21, RoHS (2002/95/EC)

Length

3.04mm

Width

2.64 mm

Height

1.12mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 20V. It has drain-source resistance of 15.5mohm at a gate-source voltage of 10V. It has continuous drain current of 50A and maximum power dissipation of 136W. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 175°C

• Package with low thermal resistance

• TrenchFET power MOSFET

Applications


• Adaptor switch

• Load switches

Certifications


• AEC-Q101

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested

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