MPN

Vishay Dual SI7956DP Type N-Channel MOSFET, 4.1 A, 150 V Enhancement, 8-Pin PowerPack SI7956DP-T1-GE3

RS Stock No.:: 180-7886
Mfr. Part No.:: SI7956DP-T1-GE3
Brand:: Vishay

Vishay Dual SI7956DP Type N-Channel MOSFET, 4.1 A, 150 V Enhancement, 8-Pin PowerPack SI7956DP-T1-GE3

Subtotal (1 pack of 5 units)*

£11.44

(exc. VAT)

£13.73

(inc. VAT)

FREE delivery for orders over £60.00

In Stock

Plus 2,920 unit(s) shipping from 22 June 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
5 +	£2.288	£11.44

*price indicative

RS Stock No.:: 180-7886
Mfr. Part No.:: SI7956DP-T1-GE3
Brand:: Vishay

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	4.1A
	Maximum Drain Source Voltage Vds	150V
	Series	SI7956DP
	Package Type	PowerPack
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.1Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-50°C
	Typical Gate Charge Qg @ Vgs	17nC
	Maximum Power Dissipation Pd	3.5W
	Maximum Operating Temperature	150°C
	Transistor Configuration	Dual
	Height	1.12mm
	Standards/Approvals	No
	Length	6.25mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 4.1A
	Maximum Drain Source Voltage Vds 150V
	Series SI7956DP
	Package Type PowerPack
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.1Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -50°C
	Typical Gate Charge Qg @ Vgs 17nC
	Maximum Power Dissipation Pd 3.5W
	Maximum Operating Temperature 150°C
	Transistor Configuration Dual
	Height 1.12mm
	Standards/Approvals No
	Length 6.25mm
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay SI7956DP Series MOSFET, 150V Drain Source Voltage, 4.1A Continuous Drain Current - SI7956DP-T1-GE3

This dual N-channel MOSFET is a surface-mount switching device designed for high-voltage power applications in industrial and electronic systems. It delivers controlled conduction for load switching and power conversion tasks, operating across a wide ambient range and intended for board-level integration where compact, dual-transistor solutions are required.

Features and Benefits:

• 150V drain tolerance enables high-voltage switching capabilities • 4.1A continuous drain current supports moderate load currents • 0.1Ω Rds(on) minimises conduction losses for improved efficiency • 17nC typical gate charge allows predictable switching behaviour • 3.5W power dissipation manages thermal load in Compact assemblies

Applications

• Suitable for DC-DC converter stages in automation equipment • Ideal for motor driver half-bridge circuits in control panels • Used for switched-mode power supplies in industrial electronics • Can be used for power distribution switches on Compact PCBs

What are the allowable gate and drain voltages for safe operation?

The gate may be driven up to 20V and the device withstands drain-source voltages up to 150V.

What thermal extremes can the device tolerate during operation?

It is rated for continuous use from -50°C up to a maximum operating temperature of 150°C.

How many pins and what package type should be expected for PCB layout?

The component is supplied as an 8-pin PowerPack surface-mount device suited to standard land patterns.

How does the dual configuration affect circuit implementation?

Two transistors are provided in a single package, enabling Compact paired-switch arrangements and simplified board routing.

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