Vishay Siliconix TrenchFET N-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23 SQ2364EES-T1_GE3

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Subtotal 100 units (supplied on a continuous strip)*

£31.10

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£37.30

(inc. VAT)

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Packaging Options:
RS Stock No.:
178-3877P
Mfr. Part No.:
SQ2364EES-T1_GE3
Brand:
Vishay Siliconix
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Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

60 V

Series

TrenchFET

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.46V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Transistor Material

Si

Typical Gate Charge @ Vgs

2 nC @ 4.5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Width

1.4mm

Length

3.04mm

Automotive Standard

AEC-Q101

Minimum Operating Temperature

-55 °C

Height

1.02mm

Forward Diode Voltage

1.2V

RoHS Status: Exempt

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 8V. It has drain-source resistance of 240mohms at a gate-source voltage of 4.5V. It has a maximum power dissipation of 3W and continuous drain current of 2A. It has a minimum and a maximum driving voltage of 1.5V and 4.5V. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET

Certifications


• AEC-Q101
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested

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