Vishay Siliconix TrenchFET P-Channel MOSFET, 30 A, 40 V, 4-Pin PowerPAK SO-8L SQJ415EP-T1_GE3
- RS Stock No.:
- 178-3859
- Mfr. Part No.:
- SQJ415EP-T1_GE3
- Brand:
- Vishay Siliconix
Subtotal (1 pack of 25 units)*
£15.85
(exc. VAT)
£19.025
(inc. VAT)
FREE delivery for orders over £50.00
- 5,975 unit(s) ready to ship
Units | Per unit | Per Pack* |
---|---|---|
25 - 75 | £0.634 | £15.85 |
100 - 475 | £0.616 | £15.40 |
500 - 975 | £0.60 | £15.00 |
1000 + | £0.584 | £14.60 |
*price indicative
- RS Stock No.:
- 178-3859
- Mfr. Part No.:
- SQJ415EP-T1_GE3
- Brand:
- Vishay Siliconix
Select all | Attribute | Value |
---|---|---|
Brand | Vishay Siliconix | |
Channel Type | P | |
Maximum Continuous Drain Current | 30 A | |
Maximum Drain Source Voltage | 40 V | |
Package Type | PowerPAK SO-8L | |
Series | TrenchFET | |
Mounting Type | Surface Mount | |
Pin Count | 4 | |
Maximum Drain Source Resistance | 20 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.5V | |
Minimum Gate Threshold Voltage | 1.5V | |
Maximum Power Dissipation | 45 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | ±20 V | |
Length | 5.99mm | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 63 nC @ 10 V | |
Maximum Operating Temperature | +175 °C | |
Width | 5mm | |
Transistor Material | Si | |
Height | 1.07mm | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1.2V | |
Automotive Standard | AEC-Q101 | |
Select all | ||
---|---|---|
Brand Vishay Siliconix | ||
Channel Type P | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type PowerPAK SO-8L | ||
Series TrenchFET | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 20 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1.5V | ||
Maximum Power Dissipation 45 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Length 5.99mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 63 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Width 5mm | ||
Transistor Material Si | ||
Height 1.07mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
Automotive Standard AEC-Q101 | ||
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