Vishay Siliconix TrenchFET P-Channel MOSFET, 30 A, 40 V, 4-Pin PowerPAK SO-8L SQJ415EP-T1_GE3

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£16.10

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£19.325

(inc. VAT)

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25 - 75£0.644£16.10
100 - 475£0.627£15.68
500 - 975£0.61£15.25
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Packaging Options:
RS Stock No.:
178-3859
Mfr. Part No.:
SQJ415EP-T1_GE3
Brand:
Vishay Siliconix
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Brand

Vishay Siliconix

Channel Type

P

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

40 V

Package Type

PowerPAK SO-8L

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Transistor Material

Si

Typical Gate Charge @ Vgs

63 nC @ 10 V

Maximum Operating Temperature

+175 °C

Length

5.99mm

Width

5mm

Minimum Operating Temperature

-55 °C

Automotive Standard

AEC-Q101

Height

1.07mm

Forward Diode Voltage

1.2V

RoHS Status: Exempt

Vishay MOSFET


The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 40V and a maximum gate-source voltage of 20V. It has drain-source resistance of 14mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 45W and continuous drain current of 30A. It has a minimum and a maximum driving voltage of 4.5V and 10V. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET

Certifications


• AEC-Q101
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested

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