Vishay Siliconix TrenchFET P-Channel MOSFET, 9.4 A, 200 V, 4-Pin PowerPAK SO-8L SQJ431AEP-T1_GE3
- RS Stock No.:
- 178-3873
- Mfr. Part No.:
- SQJ431AEP-T1_GE3
- Brand:
- Vishay Siliconix
Bulk discount available
Subtotal (1 pack of 10 units)*
£10.80
(exc. VAT)
£13.00
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 10,290 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | £1.08 | £10.80 |
| 100 - 490 | £0.917 | £9.17 |
| 500 - 990 | £0.811 | £8.11 |
| 1000 + | £0.702 | £7.02 |
*price indicative
- RS Stock No.:
- 178-3873
- Mfr. Part No.:
- SQJ431AEP-T1_GE3
- Brand:
- Vishay Siliconix
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 9.4 A | |
| Maximum Drain Source Voltage | 200 V | |
| Series | TrenchFET | |
| Package Type | PowerPAK SO-8L | |
| Mounting Type | Surface Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 760 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 68 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Width | 5mm | |
| Maximum Operating Temperature | +175 °C | |
| Length | 5.99mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 55 nC @ 10 V | |
| Transistor Material | Si | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.07mm | |
| Automotive Standard | AEC-Q101 | |
Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Channel Type P | ||
Maximum Continuous Drain Current 9.4 A | ||
Maximum Drain Source Voltage 200 V | ||
Series TrenchFET | ||
Package Type PowerPAK SO-8L | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 760 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 68 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Width 5mm | ||
Maximum Operating Temperature +175 °C | ||
Length 5.99mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 55 nC @ 10 V | ||
Transistor Material Si | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Height 1.07mm | ||
Automotive Standard AEC-Q101 | ||
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