Vishay P-Channel MOSFET, 6.5 A, 200 V, 3-Pin TO-220AB IRF9630PBF

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Subtotal (1 tube of 50 units)*

£49.05

(exc. VAT)

£58.85

(inc. VAT)

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  • 2,200 unit(s) ready to ship
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Units
Per unit
Per Tube*
50 - 50£0.981£49.05
100 - 200£0.834£41.70
250 +£0.785£39.25

*price indicative

RS Stock No.:
178-0827
Mfr. Part No.:
IRF9630PBF
Brand:
Vishay
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Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

6.5 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

800 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

74 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Typical Gate Charge @ Vgs

29 nC @ 10 V

Length

10.41mm

Width

4.7mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Height

9.01mm

Minimum Operating Temperature

-55 °C

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor


The Vishay third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

Dynamic dV/dt rating
Ease of paralleling
Simple drive requirements


MOSFET Transistors, Vishay Semiconductor

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