Vishay P-Channel MOSFET, 6.5 A, 200 V, 3-Pin D2PAK IRF9630SPBF

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Subtotal (1 tube of 50 units)*

£53.40

(exc. VAT)

£64.10

(inc. VAT)

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  • Shipping from 16 January 2026
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Units
Per unit
Per Tube*
50 - 50£1.068£53.40
100 - 200£0.908£45.40
250 +£0.855£42.75

*price indicative

RS Stock No.:
178-0865
Mfr. Part No.:
IRF9630SPBF
Brand:
Vishay
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Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

6.5 A

Maximum Drain Source Voltage

200 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

800 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

29 nC @ 10 V

Length

10.67mm

Width

9.02mm

Minimum Operating Temperature

-55 °C

Height

4.83mm

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor


The Vishay third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package.

Dynamic dV/dt rating
Repetitive avalanche rated
Ease of paralleling


MOSFET Transistors, Vishay Semiconductor

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