Vishay N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-247AC IRFPC50APBF
- RS Stock No.:
- 178-0794
- Mfr. Part No.:
- IRFPC50APBF
- Brand:
- Vishay
Save 6% when you buy 125 units
Subtotal (1 tube of 25 units)*
£88.225
(exc. VAT)
£105.875
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 100 unit(s), ready to ship
Units | Per unit | Per Tube* |
|---|---|---|
| 25 - 25 | £3.529 | £88.23 |
| 50 - 100 | £3.459 | £86.48 |
| 125 + | £3.282 | £82.05 |
*price indicative
- RS Stock No.:
- 178-0794
- Mfr. Part No.:
- IRFPC50APBF
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 11 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-247AC | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 580 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 180 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Typical Gate Charge @ Vgs | 70 nC @ 10 V | |
| Length | 15.87mm | |
| Number of Elements per Chip | 1 | |
| Width | 5.31mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 20.7mm | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 11 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-247AC | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 580 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 180 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Typical Gate Charge @ Vgs 70 nC @ 10 V | ||
Length 15.87mm | ||
Number of Elements per Chip 1 | ||
Width 5.31mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 20.7mm | ||
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