ROHM R6520ENX N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220FM R6520ENX
- RS Stock No.:
- 177-6458
- Mfr. Part No.:
- R6520ENX
- Brand:
- ROHM
Subtotal (1 pack of 2 units)*
£2.31
(exc. VAT)
£2.772
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 2 unit(s) shipping from 14 November 2025
- Plus 440 unit(s) shipping from 20 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 + | £1.155 | £2.31 |
*price indicative
- RS Stock No.:
- 177-6458
- Mfr. Part No.:
- R6520ENX
- Brand:
- ROHM
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 20 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-220FM | |
| Series | R6520ENX | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 200 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 68 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Width | 4.8mm | |
| Maximum Operating Temperature | +150 °C | |
| Length | 10.3mm | |
| Typical Gate Charge @ Vgs | 61 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 15.4mm | |
| Forward Diode Voltage | 1.5V | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-220FM | ||
Series R6520ENX | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 200 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 68 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Width 4.8mm | ||
Maximum Operating Temperature +150 °C | ||
Length 10.3mm | ||
Typical Gate Charge @ Vgs 61 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 15.4mm | ||
Forward Diode Voltage 1.5V | ||
RoHS Status: Exempt
- COO (Country of Origin):
- JP
R6520ENX is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
Low on-resistance
Fast switching speed
Parallel use is easy
Pb-free plating
Fast switching speed
Parallel use is easy
Pb-free plating
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