onsemi SiC SiC Power Module, 3-Pin TO-220 FFSP3065A

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Subtotal (1 pack of 2 units)*

£12.38

(exc. VAT)

£14.86

(inc. VAT)

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2 - 8£6.19£12.38
10 - 98£5.34£10.68
100 - 248£4.975£9.95
250 - 498£4.855£9.71
500 +£4.73£9.46

*price indicative

RS Stock No.:
172-8971
Mfr. Part No.:
FFSP3065A
Brand:
onsemi
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Brand

onsemi

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Power Dissipation

240 W

Transistor Configuration

Single

Length

10.67mm

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Width

4.8mm

Transistor Material

SiC

Forward Diode Voltage

2.4V

Height

16.51mm

Minimum Operating Temperature

-55 °C

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 650 V, D1, TO-220-2L
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 650 V, D1, TO-220-2L


The ON Semiconductor TO-220-2L silicon carbide (SiC) Schottky diode is the latest product that uses a completely new technology that provides superior switching performance and higher reliability to silicon. The diode has many advanced features like temperature independent switching characteristics and excellent thermal performance that makes it undoubtedly the next-generation power semiconductor. This diode offers many benefits that include the highest efficiency, faster-operating frequency, increased power density, reduced EMI and reduced system size and cost.

Features and Benefits


• Avalanche rated 180mJ
• Ease of paralleling
• High surge current capacity
• No reverse recovery/no forward recovery
• Operating temperature ranges between -55°C and 175°C
• Positive temperature coefficient

Applications


• EV charger
• General purpose
• Industrial power
• PFC
• Power switching circuits
• SMPS
• Solar inverter
• UPS
• Welding

Certifications


• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007

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