Specifications

Technical Reference

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	ROHM
	Channel Type	N
	Maximum Continuous Drain Current	24 A
	Maximum Drain Source Voltage	600 V
	Package Type	D2PAK (TO-263)
	Series	R6024ENJ
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	320 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	245 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	±30 V
	Maximum Operating Temperature	+150 °C
	Width	9.2mm
	Length	10.4mm
	Typical Gate Charge @ Vgs	70 nC @ 10 V
	Number of Elements per Chip	1
	Height	4.7mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.5V

	Select all
	Brand ROHM
	Channel Type N
	Maximum Continuous Drain Current 24 A
	Maximum Drain Source Voltage 600 V
	Package Type D2PAK (TO-263)
	Series R6024ENJ
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 320 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 245 W
	Transistor Configuration Single
	Maximum Gate Source Voltage ±30 V
	Maximum Operating Temperature +150 °C
	Width 9.2mm
	Length 10.4mm
	Typical Gate Charge @ Vgs 70 nC @ 10 V
	Number of Elements per Chip 1
	Height 4.7mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.5V

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Low on-resistance.
Fast switching speed.
Gate-source voltage (VGSS) guaranteed to be ±20V.
Drive circuits can be simple.
Parallel use is easy.
Pb-free lead plating

ROHM R6024ENJ N-Channel MOSFET, 24 A, 600 V, 3-Pin D2PAK R6024ENJTL

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