Taiwan Semi N-Channel MOSFET, 1.85 A, 1000 V, 3-Pin DPAK TSM2N100CP ROG
- RS Stock No.:
- 171-3619
- Mfr. Part No.:
- TSM2N100CP ROG
- Brand:
- Taiwan Semiconductor
Subtotal (1 reel of 2500 units)*
£2,282.50
(exc. VAT)
£2,740.00
(inc. VAT)
Stock information currently inaccessible
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 + | £0.913 | £2,282.50 |
*price indicative
- RS Stock No.:
- 171-3619
- Mfr. Part No.:
- TSM2N100CP ROG
- Brand:
- Taiwan Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Taiwan Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 1.85 A | |
| Maximum Drain Source Voltage | 1000 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 8.5 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5.5V | |
| Minimum Gate Threshold Voltage | 3.5V | |
| Maximum Power Dissipation | 77 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Length | 6.6mm | |
| Width | 6.1mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 17 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Forward Diode Voltage | 1.4V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.3mm | |
Select all | ||
|---|---|---|
Brand Taiwan Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.85 A | ||
Maximum Drain Source Voltage 1000 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 8.5 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5.5V | ||
Minimum Gate Threshold Voltage 3.5V | ||
Maximum Power Dissipation 77 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Length 6.6mm | ||
Width 6.1mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 17 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Forward Diode Voltage 1.4V | ||
Minimum Operating Temperature -55 °C | ||
Height 2.3mm | ||
The Taiwan Semiconductor 1000V, 1. 85A, 8. 5Ω, 3 pin, N-channel power MOSFET has single transistor configuration and enhancement channel mode. It is generally used in AC/DC LED lighting, power Supply and power meter applications.
100% avalanche tested
Advanced planar process
Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
Operating temperature ranges between -55 °C to +150 °C
77W max. power dissipation
Gate threshold voltage ranges between 3.5V-5.5V
Advanced planar process
Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
Operating temperature ranges between -55 °C to +150 °C
77W max. power dissipation
Gate threshold voltage ranges between 3.5V-5.5V
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