STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 1.85 A, 1000 V, 3-Pin IPAK STU2NK100Z
- RS Stock No.:
- 168-7526
- Mfr. Part No.:
- STU2NK100Z
- Brand:
- STMicroelectronics
Subtotal (1 tube of 75 units)*
£93.45
(exc. VAT)
£112.125
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 26 December 2025
Units | Per unit | Per Tube* |
---|---|---|
75 - 75 | £1.246 | £93.45 |
150 - 450 | £0.972 | £72.90 |
525 - 900 | £0.823 | £61.725 |
975 - 4950 | £0.685 | £51.375 |
5025 + | £0.646 | £48.45 |
*price indicative
- RS Stock No.:
- 168-7526
- Mfr. Part No.:
- STU2NK100Z
- Brand:
- STMicroelectronics
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 1.85 A | |
Maximum Drain Source Voltage | 1000 V | |
Series | MDmesh, SuperMESH | |
Package Type | IPAK (TO-251) | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 8.5 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4.5V | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 70 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Width | 2.4mm | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +150 °C | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 16 nC @ 10 V | |
Length | 6.6mm | |
Height | 6.9mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.85 A | ||
Maximum Drain Source Voltage 1000 V | ||
Series MDmesh, SuperMESH | ||
Package Type IPAK (TO-251) | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 8.5 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 70 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 2.4mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 16 nC @ 10 V | ||
Length 6.6mm | ||
Height 6.9mm | ||
Minimum Operating Temperature -55 °C | ||
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