N-Channel MOSFET, 3.3 A, 700 V, 3 + Tab-Pin DPAK Taiwan Semi TSM70N1R4CP ROG

RS Stock No.:: 171-3695
Mfr. Part No.:: TSM70N1R4CP ROG
Brand:: Taiwan Semiconductor

N-Channel MOSFET, 3.3 A, 700 V, 3 + Tab-Pin DPAK Taiwan Semi TSM70N1R4CP ROG

Available to back order for despatch when stock is available

Price Each (In a Pack of 10)

£1.247

(exc. VAT)

£1.496

(inc. VAT)

Units	Per unit	Per Pack*
10 +	£1.247	£12.47
*price indicative

RS Stock No.:: 171-3695
Mfr. Part No.:: TSM70N1R4CP ROG
Brand:: Taiwan Semiconductor

Datasheet
ESD Control Selection Guide V1

RS Stock No.:: 171-3695
Mfr. Part No.:: TSM70N1R4CP ROG
Brand:: Taiwan Semiconductor

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	3.3 A
Maximum Drain Source Voltage	700 V
Package Type	TO-252
Mounting Type	Surface Mount
Pin Count	3 + Tab
Maximum Drain Source Resistance	1.4 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	38 W
Transistor Configuration	Single
Maximum Gate Source Voltage	±30 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	7.7 nC @ 10 V
Width	6.11mm
Length	6.57mm
Forward Diode Voltage	1.4V
Height	2.29mm
Minimum Operating Temperature	-55 °C

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	3.3 A
Maximum Drain Source Voltage	700 V
Package Type	TO-252
Mounting Type	Surface Mount
Pin Count	3 + Tab
Maximum Drain Source Resistance	1.4 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	38 W
Transistor Configuration	Single
Maximum Gate Source Voltage	±30 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	7.7 nC @ 10 V
Width	6.11mm
Length	6.57mm
Forward Diode Voltage	1.4V
Height	2.29mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 3.3 A, 700 V, 3 + Tab-Pin DPAK Taiwan Semi TSM70N1R4CP ROG

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