Toshiba N-Channel MOSFET, 6 A, 30 V, 3-Pin SOT-23 SSM3K333R
- RS Stock No.:
- 171-2540
- Mfr. Part No.:
- SSM3K333R
- Brand:
- Toshiba
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 171-2540
- Mfr. Part No.:
- SSM3K333R
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Toshiba | |
Channel Type | N | |
Maximum Continuous Drain Current | 6 A | |
Maximum Drain Source Voltage | 30 V | |
Package Type | SOT-23 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 42 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.5V | |
Minimum Gate Threshold Voltage | 1.3V | |
Maximum Power Dissipation | 2 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | ±20 V | |
Typical Gate Charge @ Vgs | 3.4 nC @ 4.5 V | |
Width | 1.8mm | |
Maximum Operating Temperature | +150 °C | |
Length | 2.9mm | |
Number of Elements per Chip | 1 | |
Height | 0.8mm | |
Select all | ||
---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 6 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 42 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1.3V | ||
Maximum Power Dissipation 2 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Typical Gate Charge @ Vgs 3.4 nC @ 4.5 V | ||
Width 1.8mm | ||
Maximum Operating Temperature +150 °C | ||
Length 2.9mm | ||
Number of Elements per Chip 1 | ||
Height 0.8mm | ||
- COO (Country of Origin):
- TH
4.5V drive
Low ON-resistance: RDS(ON) = 42 mΩ (max) (@VGS = 4.5 V)
RDS(ON) = 28 mΩ (max) (@VGS = 10 V)
Low ON-resistance: RDS(ON) = 42 mΩ (max) (@VGS = 4.5 V)
RDS(ON) = 28 mΩ (max) (@VGS = 10 V)
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