Toshiba N-Channel MOSFET, 250 mA, 20 V, 3-Pin SOT-723 SSM3K37MFV
- RS Stock No.:
- 171-2483
- Mfr. Part No.:
- SSM3K37MFV
- Brand:
- Toshiba
Subtotal (1 pack of 100 units)*
£5.70
(exc. VAT)
£6.80
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 12,900 unit(s), ready to ship
Units | Per unit | Per Pack* |
---|---|---|
100 + | £0.057 | £5.70 |
*price indicative
- RS Stock No.:
- 171-2483
- Mfr. Part No.:
- SSM3K37MFV
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Toshiba | |
Channel Type | N | |
Maximum Continuous Drain Current | 250 mA | |
Maximum Drain Source Voltage | 20 V | |
Package Type | SOT-723 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 5.6 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 1V | |
Minimum Gate Threshold Voltage | 0.35V | |
Maximum Power Dissipation | 150 mW | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | ±10 V | |
Length | 0.8mm | |
Maximum Operating Temperature | +150 °C | |
Width | 1.2mm | |
Number of Elements per Chip | 1 | |
Height | 0.5mm | |
Select all | ||
---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 250 mA | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOT-723 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 5.6 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 0.35V | ||
Maximum Power Dissipation 150 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±10 V | ||
Length 0.8mm | ||
Maximum Operating Temperature +150 °C | ||
Width 1.2mm | ||
Number of Elements per Chip 1 | ||
Height 0.5mm | ||
- COO (Country of Origin):
- TH
1.5V drive
Low ON-resistance: Ron = 66mΩ (max) (@VGS = 1.5V)
Ron = 43mΩ (max) (@VGS = 1.8V)
Ron = 32mΩ (max) (@VGS = 2.5V)
Ron = 28mΩ (max) (@VGS = 4.0V)
Low ON-resistance: Ron = 66mΩ (max) (@VGS = 1.5V)
Ron = 43mΩ (max) (@VGS = 1.8V)
Ron = 32mΩ (max) (@VGS = 2.5V)
Ron = 28mΩ (max) (@VGS = 4.0V)
Related links
- Toshiba N-Channel MOSFET 20 VL3F(B
- ROHM RSM002N06 N-Channel MOSFET 60 V, 3-Pin SOT-723 RSM002N06T2L
- ROHM P-Channel MOSFET 20 V, 3-Pin TSMT-3 RTU002P02T106
- onsemi Dual N/P-Channel MOSFET 880 mA 30 V, 6-Pin SOT-363 NTJD4158CT1G
- Microchip VN2460 Silicon N-Channel MOSFET 600 V, 3-Pin SOT-89 VN2460N8-G
- ROHM RK7 N-Channel MOSFET 60 V, 3-Pin SOT-23 RK7002BMHZGT116
- onsemi Dual N-Channel MOSFET 30 V, 6-Pin SOT-363 NTJD4001NT1G
- ROHM N-Channel MOSFET 60 V, 3-Pin SOT-23 RK7002BMT116