Toshiba N-Channel MOSFET, 30.8 A, 600 V, 5-Pin DFN TK31V60W5
- RS Stock No.:
- 171-2526
- Mfr. Part No.:
- TK31V60W5
- Brand:
- Toshiba
Subtotal (1 pack of 2 units)*
£10.72
(exc. VAT)
£12.86
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 30 March 2026
Units | Per unit | Per Pack* |
---|---|---|
2 - 8 | £5.36 | £10.72 |
10 - 98 | £4.82 | £9.64 |
100 - 498 | £4.39 | £8.78 |
500 - 998 | £4.02 | £8.04 |
1000 + | £3.705 | £7.41 |
*price indicative
- RS Stock No.:
- 171-2526
- Mfr. Part No.:
- TK31V60W5
- Brand:
- Toshiba
Select all | Attribute | Value |
---|---|---|
Brand | Toshiba | |
Channel Type | N | |
Maximum Continuous Drain Current | 30.8 A | |
Maximum Drain Source Voltage | 600 V | |
Package Type | DFN | |
Mounting Type | Surface Mount | |
Pin Count | 5 | |
Maximum Drain Source Resistance | 109 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4.5V | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 240 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | ±30 V | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 105 nC @ 10 V | |
Length | 8mm | |
Width | 8mm | |
Maximum Operating Temperature | +150 °C | |
Forward Diode Voltage | 1.7V | |
Height | 0.85mm | |
Select all | ||
---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 30.8 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type DFN | ||
Mounting Type Surface Mount | ||
Pin Count 5 | ||
Maximum Drain Source Resistance 109 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 240 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 105 nC @ 10 V | ||
Length 8mm | ||
Width 8mm | ||
Maximum Operating Temperature +150 °C | ||
Forward Diode Voltage 1.7V | ||
Height 0.85mm | ||
RoHS Status: Exempt
- COO (Country of Origin):
- CN
Fast reverse recovery time: trr = 135 ns (typ.)
Low drain-source on-resistance: RDS(ON) = 0.087 Ω(typ.)
Easy to control Gate switching
Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 1.5 mA)
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