Toshiba N-Channel MOSFET, 30.8 A, 600 V, 5-Pin DFN TK31V60W5

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Subtotal (1 reel of 2500 units)*

£8,270.00

(exc. VAT)

£9,925.00

(inc. VAT)

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  • Shipping from 30 March 2026
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Units
Per unit
Per Reel*
2500 - 2500£3.308£8,270.00
5000 +£3.122£7,805.00

*price indicative

RS Stock No.:
171-2421
Mfr. Part No.:
TK31V60W5
Brand:
Toshiba
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Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

30.8 A

Maximum Drain Source Voltage

600 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

109 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

240 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Maximum Operating Temperature

+150 °C

Width

8mm

Typical Gate Charge @ Vgs

105 nC @ 10 V

Length

8mm

Number of Elements per Chip

1

Height

0.85mm

Forward Diode Voltage

1.7V

RoHS Status: Exempt

COO (Country of Origin):
CN
Switching Voltage Regulators
Fast reverse recovery time: trr = 135 ns (typ.)
Low drain-source on-resistance: RDS(ON) = 0.087 Ω(typ.)
Easy to control Gate switching
Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 1.5 mA)

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