Nexperia PMV16XN N-Channel MOSFET, 8.6 A, 20 V, 3-Pin SOT-23 PMV16XNR
- RS Stock No.:
- 170-5355
- Mfr. Part No.:
- PMV16XNR
- Brand:
- Nexperia
Bulk discount available
Subtotal (1 pack of 50 units)*
£12.70
(exc. VAT)
£15.25
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,850 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 200 | £0.254 | £12.70 |
| 250 - 450 | £0.118 | £5.90 |
| 500 - 1200 | £0.112 | £5.60 |
| 1250 - 2450 | £0.098 | £4.90 |
| 2500 + | £0.096 | £4.80 |
*price indicative
- RS Stock No.:
- 170-5355
- Mfr. Part No.:
- PMV16XNR
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 8.6 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | TO-236 | |
| Series | PMV16XN | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 33 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 0.9V | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 6.94 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 12 V | |
| Typical Gate Charge @ Vgs | 13.4 nC @ 4.5 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 3mm | |
| Width | 1.4mm | |
| Number of Elements per Chip | 1 | |
| Height | 1mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type N | ||
Maximum Continuous Drain Current 8.6 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type TO-236 | ||
Series PMV16XN | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 33 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 0.9V | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 6.94 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 12 V | ||
Typical Gate Charge @ Vgs 13.4 nC @ 4.5 V | ||
Maximum Operating Temperature +150 °C | ||
Length 3mm | ||
Width 1.4mm | ||
Number of Elements per Chip 1 | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
Switching solutions for your portable designs. Choose from a wide range of single and dual N-channel MOSFETs up to 20 V. Great reliability due to our trusted TrenchMOS and package technologies. Easy-to-use, our low voltage MOSFETs are designed specifically to meet the demands of portable applications with low drive voltages.
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Low threshold voltage
Very fast switching
Enhanced power dissipation capability of 1200 mW
Target applications
LED driver
Power management
Low-side load switch
Switching circuits
Low threshold voltage
Very fast switching
Enhanced power dissipation capability of 1200 mW
Target applications
LED driver
Power management
Low-side load switch
Switching circuits
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