Nexperia N-Channel MOSFET, 1.05 A, 20 V, 3-Pin SOT-23 BSH105,215
- RS Stock No.:
- 509-273
- Mfr. Part No.:
- BSH105,215
- Brand:
- Nexperia
Image representative of range
Bulk discount available
Subtotal (1 pack of 20 units)*
£3.66
(exc. VAT)
£4.40
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 340 unit(s) shipping from 27 October 2025
- Plus 280 unit(s) shipping from 27 October 2025
- Plus 40,900 unit(s) shipping from 03 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | £0.183 | £3.66 |
| 40 - 80 | £0.125 | £2.50 |
| 100 - 180 | £0.078 | £1.56 |
| 200 - 380 | £0.077 | £1.54 |
| 400 + | £0.075 | £1.50 |
*price indicative
- RS Stock No.:
- 509-273
- Mfr. Part No.:
- BSH105,215
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 1.05 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 200 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 0.85V | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 417 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Width | 1.4mm | |
| Length | 3mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 3.9 nC @ 4.5 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1mm | |
Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.05 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 200 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 0.85V | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 417 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Width 1.4mm | ||
Length 3mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 3.9 nC @ 4.5 V | ||
Minimum Operating Temperature -55 °C | ||
Height 1mm | ||
N-Channel MOSFET, up to 30V
MOSFET Transistors, NXP Semiconductors
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