Vishay P-Channel MOSFET, 13.4 A, 20 V, 8-Pin SOIC SI4403CDY-T1-GE3

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Subtotal (1 reel of 2500 units)*

£655.00

(exc. VAT)

£785.00

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +£0.262£655.00

*price indicative

RS Stock No.:
169-5792
Mfr. Part No.:
SI4403CDY-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

13.4 A

Maximum Drain Source Voltage

20 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

5mm

Width

4mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

60 nC @ 8 V

Height

1.55mm

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor



MOSFET Transistors, Vishay Semiconductor

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