STMicroelectronics MDmesh M2 N-Channel MOSFET, 26 A, 650 V, 3-Pin TO-247 STW33N60M2
- RS Stock No.:
- 168-8076
- Mfr. Part No.:
- STW33N60M2
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 tube of 30 units)*
£81.90
(exc. VAT)
£98.40
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 16 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 60 | £2.73 | £81.90 |
| 90 - 480 | £2.291 | £68.73 |
| 510 + | £2.234 | £67.02 |
*price indicative
- RS Stock No.:
- 168-8076
- Mfr. Part No.:
- STW33N60M2
- Brand:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 26 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-247 | |
| Series | MDmesh M2 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 125 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 190 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 45.5 nC @ 10 V | |
| Length | 15.75mm | |
| Width | 5.15mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Height | 20.15mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 26 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-247 | ||
Series MDmesh M2 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 125 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 190 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 45.5 nC @ 10 V | ||
Length 15.75mm | ||
Width 5.15mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Height 20.15mm | ||
Minimum Operating Temperature -55 °C | ||
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