STMicroelectronics MDmesh M2 N-Channel MOSFET, 68 A, 600 V, 3-Pin TO-247 STW70N60M2
- RS Stock No.:
- 917-3362
- Mfr. Part No.:
- STW70N60M2
- Brand:
- STMicroelectronics
Save 23% when you buy 50 units
Subtotal (1 unit)*
£7.50
(exc. VAT)
£9.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 12 March 2026
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Units | Per unit |
|---|---|
| 1 - 4 | £7.50 |
| 5 - 9 | £7.13 |
| 10 - 24 | £6.42 |
| 25 - 49 | £5.91 |
| 50 + | £5.77 |
*price indicative
- RS Stock No.:
- 917-3362
- Mfr. Part No.:
- STW70N60M2
- Brand:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 68 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-247 | |
| Series | MDmesh M2 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 40 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 450 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Width | 20.15mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Length | 15.75mm | |
| Typical Gate Charge @ Vgs | 118 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.6V | |
| Height | 5.15mm | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 68 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-247 | ||
Series MDmesh M2 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 40 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 450 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Width 20.15mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Length 15.75mm | ||
Typical Gate Charge @ Vgs 118 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.6V | ||
Height 5.15mm | ||
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