IXYS Linear N-Channel MOSFET, 62 A, 500 V, 4-Pin SOT-227 IXTN62N50L
- RS Stock No.:
- 168-4608
- Mfr. Part No.:
- IXTN62N50L
- Brand:
- IXYS
Currently unavailable
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- RS Stock No.:
- 168-4608
- Mfr. Part No.:
- IXTN62N50L
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 62 A | |
| Maximum Drain Source Voltage | 500 V | |
| Package Type | SOT-227 | |
| Series | Linear | |
| Mounting Type | Screw Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 100 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Maximum Power Dissipation | 800 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Width | 25.42mm | |
| Maximum Operating Temperature | +150 °C | |
| Length | 38.23mm | |
| Typical Gate Charge @ Vgs | 550 nC @ 20 V | |
| Height | 9.6mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 62 A | ||
Maximum Drain Source Voltage 500 V | ||
Package Type SOT-227 | ||
Series Linear | ||
Mounting Type Screw Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 100 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Maximum Power Dissipation 800 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Width 25.42mm | ||
Maximum Operating Temperature +150 °C | ||
Length 38.23mm | ||
Typical Gate Charge @ Vgs 550 nC @ 20 V | ||
Height 9.6mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- US
N-Channel Power MOSFET, IXYS Linear Series
N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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