N-Channel MOSFET, 200 A, 100 V, 4-Pin SOT-227 IXYS IXFN200N10P
- RS Stock No.:
- 168-4576
- Mfr. Part No.:
- IXFN200N10P
- Brand:
- IXYS
Available to back order for despatch 03/05/2024
Added
Price Each (In a Tube of 10)
£22.838
(exc. VAT)
£27.406
(inc. VAT)
| Units | Per unit | Per Tube* |
| 10 + | £22.838 | £228.38 |
| *price indicative | ||
- RS Stock No.:
- 168-4576
- Mfr. Part No.:
- IXFN200N10P
- Brand:
- IXYS
Legislation and Compliance
- COO (Country of Origin):
- PH
Product Details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 200 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | SOT-227 |
| Series | Polar HiPerFET |
| Mounting Type | Screw Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 7.5 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 680 W |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Typical Gate Charge @ Vgs | 235 nC @ 10 V |
| Length | 38.23mm |
| Maximum Operating Temperature | +175 °C |
| Number of Elements per Chip | 1 |
| Width | 25.07mm |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.5V |
| Height | 9.6mm |
- RS Stock No.:
- 168-4576
- Mfr. Part No.:
- IXFN200N10P
- Brand:
- IXYS
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