N-Channel MOSFET, 120 A, 200 V, 3-Pin TO-247 IXYS IXFH120N20P

RS Stock No.:: 168-4466
Mfr. Part No.:: IXFH120N20P
Brand:: IXYS

N-Channel MOSFET, 120 A, 200 V, 3-Pin TO-247 IXYS IXFH120N20P

Available to back order for despatch 02/04/2025

Estimated Total Price (30 Units)

£320.01

(exc. VAT)

£384.00

(inc. VAT)

Units	Per unit	Per Tube*
30 +	£10.667	£320.01
*price indicative

RS Stock No.:: 168-4466
Mfr. Part No.:: IXFH120N20P
Brand:: IXYS

IXFH120N20P_Data Sheet
ESD Control Selection Guide V1

RS Stock No.:: 168-4466
Mfr. Part No.:: IXFH120N20P
Brand:: IXYS

IXFH120N20P_Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	120 A
Maximum Drain Source Voltage	200 V
Series	HiperFET, Polar
Package Type	TO-247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	22 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	714 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	16.26mm
Typical Gate Charge @ Vgs	152 nC @ 10 V
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Width	5.3mm
Transistor Material	Si
Height	21.46mm
Minimum Operating Temperature	-55 °C

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	120 A
Maximum Drain Source Voltage	200 V
Series	HiperFET, Polar
Package Type	TO-247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	22 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	714 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	16.26mm
Typical Gate Charge @ Vgs	152 nC @ 10 V
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Width	5.3mm
Transistor Material	Si
Height	21.46mm
Minimum Operating Temperature	-55 °C

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