IXYS HiperFET, Polar N-Channel MOSFET, 120 A, 200 V, 3-Pin TO-247 IXFH120N20P

Bulk discount available

Subtotal (1 unit)*

£11.76

(exc. VAT)

£14.11

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 19 unit(s) ready to ship
  • Plus 999,999,980 unit(s) shipping from 31 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 4£11.76
5 - 19£10.83
20 - 49£10.25
50 - 99£7.89
100 +£7.54

*price indicative

Packaging Options:
RS Stock No.:
193-458
Distrelec Article No.:
302-53-308
Mfr. Part No.:
IXFH120N20P
Brand:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

200 V

Package Type

TO-247

Series

HiperFET, Polar

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

22 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

714 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Width

5.3mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

152 nC @ 10 V

Maximum Operating Temperature

+175 °C

Length

16.26mm

Height

21.46mm

Minimum Operating Temperature

-55 °C

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series


N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS


MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

Related links