onsemi PowerTrench N-Channel MOSFET, 100 A, 30 V, 8-Pin Power 33 FDMC7660
- RS Stock No.:
- 166-2688
- Mfr. Part No.:
- FDMC7660
- Brand:
- onsemi
Subtotal (1 reel of 3000 units)*
£1,635.00
(exc. VAT)
£1,962.00
(inc. VAT)
Units | Per unit | Per Reel* |
---|---|---|
3000 + | £0.545 | £1,635.00 |
*price indicative
- RS Stock No.:
- 166-2688
- Mfr. Part No.:
- FDMC7660
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 100 A | |
Maximum Drain Source Voltage | 30 V | |
Series | PowerTrench | |
Package Type | Power 33 | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 3.3 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1.2V | |
Maximum Power Dissipation | 41 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Typical Gate Charge @ Vgs | 54 nC @ 10 V | |
Length | 3.3mm | |
Width | 3.3mm | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Maximum Operating Temperature | +150 °C | |
Minimum Operating Temperature | -55 °C | |
Height | 1.05mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 30 V | ||
Series PowerTrench | ||
Package Type Power 33 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 3.3 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 41 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 54 nC @ 10 V | ||
Length 3.3mm | ||
Width 3.3mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 1.05mm | ||
PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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