onsemi PowerTrench N-Channel MOSFET, 39 A, 100 V, 8-Pin PQFN8 FDMS86104
- RS Stock No.:
- 739-4857
- Mfr. Part No.:
- FDMS86104
- Brand:
- onsemi
Subtotal (1 unit)*
£1.45
(exc. VAT)
£1.74
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 19 March 2026
Units | Per unit |
|---|---|
| 1 + | £1.45 |
*price indicative
- RS Stock No.:
- 739-4857
- Mfr. Part No.:
- FDMS86104
- Brand:
- onsemi
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 39 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | PowerTrench | |
| Package Type | PQFN8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 40 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 73 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Width | 6mm | |
| Typical Gate Charge @ Vgs | 11.7 nC @ 10 V | |
| Length | 5mm | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.05mm | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 39 A | ||
Maximum Drain Source Voltage 100 V | ||
Series PowerTrench | ||
Package Type PQFN8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 40 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 73 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Width 6mm | ||
Typical Gate Charge @ Vgs 11.7 nC @ 10 V | ||
Length 5mm | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 1.05mm | ||
PowerTrench® N-Channel MOSFET, 20A to 59.9A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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