PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	750 mA
	Maximum Drain Source Voltage	30 V
	Series	PowerTrench
	Package Type	SOT-363
	Mounting Type	Surface Mount
	Pin Count	6
	Maximum Drain Source Resistance	400 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	0.65V
	Maximum Power Dissipation	360 mW
	Transistor Configuration	Isolated
	Maximum Gate Source Voltage	-12 V, +12 V
	Number of Elements per Chip	2
	Length	2mm
	Width	1.25mm
	Typical Gate Charge @ Vgs	1.03 nC @ 4.5 V
	Transistor Material	Si
	Maximum Operating Temperature	+150 °C
	Height	1mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand onsemi
	Channel Type N
	Maximum Continuous Drain Current 750 mA
	Maximum Drain Source Voltage 30 V
	Series PowerTrench
	Package Type SOT-363
	Mounting Type Surface Mount
	Pin Count 6
	Maximum Drain Source Resistance 400 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 0.65V
	Maximum Power Dissipation 360 mW
	Transistor Configuration Isolated
	Maximum Gate Source Voltage -12 V, +12 V
	Number of Elements per Chip 2
	Length 2mm
	Width 1.25mm
	Typical Gate Charge @ Vgs 1.03 nC @ 4.5 V
	Transistor Material Si
	Maximum Operating Temperature +150 °C
	Height 1mm
	Minimum Operating Temperature -55 °C

onsemi PowerTrench Dual N-Channel MOSFET, 750 mA, 30 V, 6-Pin SOT-363 FDG8850NZ

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

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