onsemi PowerTrench N-Channel MOSFET, 8 A, 100 V, 3-Pin DPAK FDD86102LZ
- RS Stock No.:
- 166-2647
- Mfr. Part No.:
- FDD86102LZ
- Brand:
- onsemi
Subtotal (1 reel of 2500 units)*
£1,185.00
(exc. VAT)
£1,422.50
(inc. VAT)
FREE delivery for orders over £50.00
- 5,000 unit(s) ready to ship
Units | Per unit | Per Reel* |
---|---|---|
2500 + | £0.474 | £1,185.00 |
*price indicative
- RS Stock No.:
- 166-2647
- Mfr. Part No.:
- FDD86102LZ
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 8 A | |
Maximum Drain Source Voltage | 100 V | |
Series | PowerTrench | |
Package Type | DPAK (TO-252) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 40 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 54 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Width | 6.22mm | |
Typical Gate Charge @ Vgs | 18 nC @ 10 V | |
Transistor Material | Si | |
Maximum Operating Temperature | +150 °C | |
Length | 6.73mm | |
Height | 2.39mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 8 A | ||
Maximum Drain Source Voltage 100 V | ||
Series PowerTrench | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 40 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 54 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Width 6.22mm | ||
Typical Gate Charge @ Vgs 18 nC @ 10 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Length 6.73mm | ||
Height 2.39mm | ||
Minimum Operating Temperature -55 °C | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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