onsemi PowerTrench, SyncFET Dual N-Channel MOSFET, 6.9 A, 8.2 A, 30 V, 8-Pin SOIC FDS6900AS
- RS Stock No.:
- 166-2446
- Mfr. Part No.:
- FDS6900AS
- Brand:
- onsemi
Subtotal (1 reel of 2500 units)*
£625.00
(exc. VAT)
£750.00
(inc. VAT)
Units | Per unit | Per Reel* |
---|---|---|
2500 + | £0.25 | £625.00 |
*price indicative
- RS Stock No.:
- 166-2446
- Mfr. Part No.:
- FDS6900AS
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 6.9 A, 8.2 A | |
Maximum Drain Source Voltage | 30 V | |
Series | PowerTrench, SyncFET | |
Package Type | SOIC | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 22 mΩ, 27 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 2 W | |
Transistor Configuration | Series | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Length | 5mm | |
Width | 3.99mm | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 10 nC @ 10 V, 11 nC @ 10 V | |
Number of Elements per Chip | 2 | |
Transistor Material | Si | |
Minimum Operating Temperature | -55 °C | |
Height | 1.5mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 6.9 A, 8.2 A | ||
Maximum Drain Source Voltage 30 V | ||
Series PowerTrench, SyncFET | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 22 mΩ, 27 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2 W | ||
Transistor Configuration Series | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 5mm | ||
Width 3.99mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 10 nC @ 10 V, 11 nC @ 10 V | ||
Number of Elements per Chip 2 | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 1.5mm | ||
- COO (Country of Origin):
- MY
PowerTrench® SyncFET™ Dual MOSFET, Fairchild Semiconductor
High Performance Trench Technology for extremely low RDS(on)
SyncFET™ benefits from an efficient Schottky body diode
Applications in Synchronous Rectification DC-DC Converter, Motor Drives, networking point of load Low Side Switch
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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