onsemi N-Channel MOSFET, 1.7 A, 30 V, 3-Pin SOT-23 NDS355AN

Subtotal (1 reel of 3000 units)*

£345.00

(exc. VAT)

£414.00

(inc. VAT)

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3000 +£0.115£345.00

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RS Stock No.:
166-1816
Mfr. Part No.:
NDS355AN
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

1.7 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

230 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

3.5 nC @ 5 V

Length

2.92mm

Width

1.4mm

Height

0.94mm

Minimum Operating Temperature

-55 °C

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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