onsemi N-Channel MOSFET, 1.7 A, 30 V, 3-Pin SOT-23 NDS355AN

Bulk discount available

Subtotal (1 pack of 5 units)*

£1.98

(exc. VAT)

£2.375

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 270 unit(s) ready to ship
  • Plus 30 unit(s) ready to ship from another location
  • Plus 11,400 unit(s) shipping from 10 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
5 - 45£0.396£1.98
50 - 95£0.342£1.71
100 - 495£0.296£1.48
500 - 995£0.26£1.30
1000 +£0.236£1.18

*price indicative

Packaging Options:
RS Stock No.:
739-0167
Mfr. Part No.:
NDS355AN
Brand:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

1.7 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

230 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Transistor Material

Si

Typical Gate Charge @ Vgs

3.5 nC @ 5 V

Maximum Operating Temperature

+150 °C

Width

1.4mm

Length

2.92mm

Minimum Operating Temperature

-55 °C

Height

0.94mm

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Related links