Nexperia N-Channel MOSFET, 5.5 A, 30 V, 3-Pin SOT-23 PMV25ENEAR

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Subtotal (1 pack of 25 units)*

£7.525

(exc. VAT)

£9.025

(inc. VAT)

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Units
Per unit
Per Pack*
25 - 225£0.301£7.53
250 - 600£0.172£4.30
625 - 1225£0.152£3.80
1250 - 2475£0.133£3.33
2500 +£0.126£3.15

*price indicative

Packaging Options:
RS Stock No.:
151-3122
Mfr. Part No.:
PMV25ENEAR
Brand:
Nexperia
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Brand

Nexperia

Channel Type

N

Maximum Continuous Drain Current

5.5 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

39 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

6.94 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

1.4mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

12.6 nC @ 10 V

Length

3mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

1.1mm

Automotive Standard

AEC-Q101

Automotive MOSFETs, The world's largest portfolio of AEC-Q101 qualified power MOSFETs, An in-depth understanding of automotive system requirements and focused technical capability enables Nexperia to provide power semiconductor solutions across a wide spectrum of applications. From driving a simple lamp to the sophisticated needs of power control in engine, body or chassis applications, Nexperia power semiconductors can provide the answer to many automotive system power problems.

AEC-Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175°C rating

30 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Low threshold voltage
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified

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