Infineon HEXFET N-Channel MOSFET, 79 A, 60 V, 3-Pin TO-220AB IRF1018EPBF

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Subtotal (1 tube of 50 units)*

£31.50

(exc. VAT)

£38.00

(inc. VAT)

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50 - 50£0.63£31.50
100 - 200£0.517£25.85
250 - 450£0.485£24.25
500 - 1200£0.454£22.70
1250 +£0.416£20.80

*price indicative

RS Stock No.:
145-9197
Mfr. Part No.:
IRF1018EPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

79 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220AB

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Typical Gate Charge @ Vgs

46 nC @ 10 V

Length

10.67mm

Width

4.83mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

9.02mm

COO (Country of Origin):
MX

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