Infineon CoolMOS™ C6 N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-247 IPW60R160C6FKSA1
- RS Stock No.:
- 145-8910
- Mfr. Part No.:
- IPW60R160C6FKSA1
- Brand:
- Infineon
Subtotal (1 tube of 30 units)*
£90.90
(exc. VAT)
£109.20
(inc. VAT)
FREE delivery for orders over £50.00
- Final 30 unit(s), ready to ship
Units | Per unit | Per Tube* |
---|---|---|
30 - 30 | £3.03 | £90.90 |
60 - 120 | £2.879 | £86.37 |
150 - 270 | £2.757 | £82.71 |
300 - 570 | £2.636 | £79.08 |
600 + | £2.454 | £73.62 |
*price indicative
- RS Stock No.:
- 145-8910
- Mfr. Part No.:
- IPW60R160C6FKSA1
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 24 A | |
Maximum Drain Source Voltage | 650 V | |
Package Type | TO-247 | |
Series | CoolMOS™ C6 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 160 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3.5V | |
Minimum Gate Threshold Voltage | 2.5V | |
Maximum Power Dissipation | 176 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Typical Gate Charge @ Vgs | 75 nC @ 10 V | |
Length | 16.13mm | |
Width | 5.21mm | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +150 °C | |
Transistor Material | Si | |
Minimum Operating Temperature | -55 °C | |
Height | 21.1mm | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 24 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-247 | ||
Series CoolMOS™ C6 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 160 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 176 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Typical Gate Charge @ Vgs 75 nC @ 10 V | ||
Length 16.13mm | ||
Width 5.21mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 21.1mm | ||
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