P-Channel MOSFET, 2 A, 30 V, 3-Pin SOT-23 STMicroelectronics STR2P3LLH6
- RS Stock No.:
- 145-8882
- Mfr. Part No.:
- STR2P3LLH6
- Brand:
- STMicroelectronics
Subtotal (1 reel of 3000 units)**
£393.00
(exc. VAT)
£471.00
(inc. VAT)
Available to back order for despatch 18/09/2025*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over £50.00
Units | Per unit | Per Reel** |
|---|---|---|
| 3000 + | £0.131 | £393.00 |
**price indicative
- RS Stock No.:
- 145-8882
- Mfr. Part No.:
- STR2P3LLH6
- Brand:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 2 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOT-23 | |
| Series | STripFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 90 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 350 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 1.75mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Length | 3.04mm | |
| Typical Gate Charge @ Vgs | 6 nC @ 4.5 V | |
| Forward Diode Voltage | 1.1V | |
| Height | 1.3mm | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type P | ||
Maximum Continuous Drain Current 2 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-23 | ||
Series STripFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 90 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 350 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 1.75mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Length 3.04mm | ||
Typical Gate Charge @ Vgs 6 nC @ 4.5 V | ||
Forward Diode Voltage 1.1V | ||
Height 1.3mm | ||
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