Vishay N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK SUM70040E-GE3
- RS Stock No.:
- 124-2248
- Mfr. Part No.:
- SUM70040E-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 5 units)*
£8.45
(exc. VAT)
£10.15
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 375 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £1.69 | £8.45 |
| 50 - 120 | £1.252 | £6.26 |
| 125 - 245 | £1.198 | £5.99 |
| 250 - 495 | £1.166 | £5.83 |
| 500 + | £1.138 | £5.69 |
*price indicative
- RS Stock No.:
- 124-2248
- Mfr. Part No.:
- SUM70040E-GE3
- Brand:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 120 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 4.6 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 375 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 10.41mm | |
| Maximum Operating Temperature | +175 °C | |
| Length | 9.65mm | |
| Typical Gate Charge @ Vgs | 76 nC @ 10 V | |
| Height | 4.82mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.5V | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 120 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4.6 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 375 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 10.41mm | ||
Maximum Operating Temperature +175 °C | ||
Length 9.65mm | ||
Typical Gate Charge @ Vgs 76 nC @ 10 V | ||
Height 4.82mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.5V | ||
Related links
- Vishay N-Channel MOSFET 100 V, 3-Pin TO-220AB SUP70040E-GE3
- Vishay N-Channel 100-V N-Channel MOSFET 100 V, 3-Pin D2PAK SUM70042E-GE3
- Vishay N-Channel MOSFET 100 V, 3-Pin D2PAK SIHF530STRR-GE3
- Infineon N-Channel MOSFET 100 V, 3-Pin D2PAK IPB120N10S405ATMA1
- ROHM RJ1 N-Channel MOSFET 100 V, 3-Pin D2PAK RJ1P07CBHTL1
- onsemi PowerTrench N-Channel MOSFET 100 V, 3-Pin D2PAK FDB035N10A
- Infineon OptiMOS™ 3 N-Channel MOSFET 100 V, 3-Pin D2PAK IPB027N10N3GATMA1
- STMicroelectronics STripFET II N-Channel MOSFET 100 V, 3-Pin D2PAK STB120NF10T4