onsemi N-Channel MOSFET, 70 A, 60 V Enhancement, 3-Pin TO-220 RFP70N06
- RS Stock No.:
- 124-1664
- Mfr. Part No.:
- RFP70N06
- Brand:
- onsemi
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View bulk pricing optionsSubtotal (1 tube of 50 units)*
£50.50
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£60.50
(inc. VAT)
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In Stock
- 100 unit(s) ready to ship
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Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 200 | £1.01 | £50.50 |
| 250 - 950 | £0.984 | £49.20 |
| 1000 - 2450 | £0.959 | £47.95 |
| 2500 + | £0.935 | £46.75 |
*price indicative
- RS Stock No.:
- 124-1664
- Mfr. Part No.:
- RFP70N06
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 14mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 150W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 120nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Operating Temperature | 175°C | |
| Height | 9.4mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Width | 4.83mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 14mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 150W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 120nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Operating Temperature 175°C | ||
Height 9.4mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Width 4.83mm | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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