Vishay P-Channel MOSFET, 50 A, 40 V, 3-Pin DPAK SUD50P04-08-GE3
- RS Stock No.:
- 121-9658
- Mfr. Part No.:
- SUD50P04-08-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 5 units)*
£7.42
(exc. VAT)
£8.905
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 35 unit(s) ready to ship
- Plus 7,735 unit(s) shipping from 11 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £1.484 | £7.42 |
| 50 - 120 | £1.334 | £6.67 |
| 125 - 245 | £1.11 | £5.55 |
| 250 - 495 | £0.862 | £4.31 |
| 500 + | £0.682 | £3.41 |
*price indicative
- RS Stock No.:
- 121-9658
- Mfr. Part No.:
- SUD50P04-08-GE3
- Brand:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 50 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 10 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 73.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 106 nC @ 10 V | |
| Length | 6.73mm | |
| Width | 6.22mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.5V | |
| Height | 2.38mm | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 50 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 10 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 73.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 106 nC @ 10 V | ||
Length 6.73mm | ||
Width 6.22mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.5V | ||
Height 2.38mm | ||
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