STMicroelectronics G-HEMT P-Channel Transistor, 29 A, 700 V Enhancement, 8-Pin PowerFLAT SGT080R70ILB
- RS Stock No.:
- 719-632
- Mfr. Part No.:
- SGT080R70ILB
- Brand:
- STMicroelectronics
Image representative of range
Subtotal (1 unit)*
£2.18
(exc. VAT)
£2.62
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- Plus 300 unit(s) shipping from 01 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 + | £2.18 |
*price indicative
- RS Stock No.:
- 719-632
- Mfr. Part No.:
- SGT080R70ILB
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | P-Channel | |
| Product Type | Transistor | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | PowerFLAT | |
| Series | G-HEMT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 188W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 6.2nC | |
| Maximum Gate Source Voltage Vgs | -6, 7V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.9mm | |
| Width | 8.1mm | |
| Length | 8.1mm | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type P-Channel | ||
Product Type Transistor | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type PowerFLAT | ||
Series G-HEMT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 188W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 6.2nC | ||
Maximum Gate Source Voltage Vgs -6, 7V | ||
Maximum Operating Temperature 150°C | ||
Height 0.9mm | ||
Width 8.1mm | ||
Length 8.1mm | ||
- COO (Country of Origin):
- CN
The STMicroelectronics 700 V 29 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.
Enhancement mode normally off transistor
Very high switching speed
High power management capability
Extremely low capacitances
Kelvin source pad for optimum gate driving
Zero reverse recovery charge
ESD safeguard
Related links
- STMicroelectronics G-HEMT P-Channel Transistor 700 V Enhancement, 8-Pin PowerFLAT SGT140R70ILB
- STMicroelectronics G-HEMT P-Channel Transistor 700 V Enhancement, 8-Pin PowerFLAT SGT190R70ILB
- STMicroelectronics G-HEMT P-Channel Transistor 700 V Enhancement, 8-Pin PowerFLAT SGT105R70ILB
- STMicroelectronics G-HEMT P-Channel Transistor 700 V Enhancement, 8-Pin PowerFLAT SGT240R70ILB
- STMicroelectronics G-HEMT P-Channel Transistor 700 V Enhancement, 13-Pin TO-LL SGT070R70HTO
- STMicroelectronics G-HEMT P-Channel Power MOSFET 700 V Enhancement, 2-Pin TO-252 SGT350R70GTK
- STMicroelectronics STripFET Type P-Channel MOSFET 60 V Enhancement, 8-Pin PowerFLAT
- STMicroelectronics STripFET Type P-Channel MOSFET 40 V Enhancement, 8-Pin PowerFLAT