STMicroelectronics G-HEMT P-Channel Transistor, 17 A, 700 V Enhancement, 8-Pin PowerFLAT SGT140R70ILB

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£1.19

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£1.43

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RS Stock No.:
719-634
Mfr. Part No.:
SGT140R70ILB
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

P-Channel

Product Type

Transistor

Maximum Continuous Drain Current Id

17A

Maximum Drain Source Voltage Vds

700V

Package Type

PowerFLAT

Series

G-HEMT

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

140mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

3.5nC

Maximum Power Dissipation Pd

113W

Maximum Gate Source Voltage Vgs

-6 to 7 V

Maximum Operating Temperature

150°C

Width

8.1 mm

Length

8.1mm

Height

0.9mm

COO (Country of Origin):
CN
The STMicroelectronics 700 V 17 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.

Enhancement mode normally off transistor

Very high switching speed

High power management capability

Extremely low capacitances

Kelvin source pad for optimum gate driving

Zero reverse recovery charge

ESD safeguard

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