ROHM AG087FGD3HRB N-Channel MOSFET, 40 A, 40 V, 3-Pin DPAK AG087FGD3HRBTL

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Subtotal (1 tape of 2 units)*

£1.33

(exc. VAT)

£1.596

(inc. VAT)

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Units
Per unit
Per Tape*
2 - 18£0.665£1.33
20 - 48£0.585£1.17
50 - 198£0.525£1.05
200 - 998£0.425£0.85
1000 +£0.415£0.83

*price indicative

Packaging Options:
RS Stock No.:
687-378
Mfr. Part No.:
AG087FGD3HRBTL
Brand:
ROHM
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Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

40 V

Package Type

TO-252 (TL)

Series

AG087FGD3HRB

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

1

COO (Country of Origin):
JP
The ROHM Power MOSFET designed for automotive and industrial applications. This versatile component operates at a maximal drain-source voltage of 40V, enabling efficient control in power management systems. Built with advanced technology, it boasts a low on-state resistance of 7.0 mΩ, optimising power efficiency and thermal performance. AEC-Q101 qualified, this MOSFET is reliable even in rigorous automotive environments, making it a sound choice for engineers seeking durable solutions. Its robust thermal resistance and avalanched tested design ensure exceptional reliability under varied operating conditions, cementing its status as a go-to option for high-current applications.

Continuous drain current rated at ±40A, providing reliable performance in demanding scenarios
Breakdown voltage of 40V ensuring robust protection against over-voltage conditions
Low gate threshold voltage of 1.0V to 2.5V facilitating smoother operation and control
Compliant with AEC Q101 , highlighting its suitability for automotive applications
Exceptional thermal resistance of 2.80℃/W, enhancing heat dissipation and lifespan
100% avalanche tested, providing peace of mind in high-stress environments
Features a DPAK package, optimising footprint while supporting effective thermal management
Suitable for high efficiency designs in automotive and other high-current applications

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