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Vishay EF Type N-Channel Power MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-247AC

RS Stock No.:: 653-138
Mfr. Part No.:: SIHG11N80AEF-GE3
Brand:: Vishay

Vishay EF Type N-Channel Power MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-247AC

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RS Stock No.:: 653-138
Mfr. Part No.:: SIHG11N80AEF-GE3
Brand:: Vishay

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	8A
	Maximum Drain Source Voltage Vds	800V
	Series	EF
	Package Type	TO-247AC
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.483Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	41nC
	Maximum Power Dissipation Pd	78W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Length	16.25mm
	Standards/Approvals	RoHS
	Width	20.70mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 8A
	Maximum Drain Source Voltage Vds 800V
	Series EF
	Package Type TO-247AC
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.483Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 41nC
	Maximum Power Dissipation Pd 78W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Length 16.25mm
	Standards/Approvals RoHS
	Width 20.70mm
	Automotive Standard No

Datasheet - SIHG11N80AEF-GE3

Vishay Series EF Power MOSFET, 800V Drain Source Voltage, 78W Power Dissipation - SIHG11N80AEF-GE3

This power MOSFET is a high-voltage, N-channel switching device designed for power-electronic duties where robust voltage handling and through-hole mounting are required. It operates as an enhancement-mode transistor suitable for applications needing a high drain-to-source breakdown and conventional gate-drive arrangements. The package supports wire-lead assembly and is intended for industrial and electronic system integration.

Features and Benefits:

• 800V drain rating enables high-voltage switching applications • 8A continuous drain current supports moderate load throughput • 0.483Ω Rds(on) minimises conduction losses under load • 41nC gate charge reduces switching energy and drive requirements • 78W power dissipation allows sustained thermal loading • 30V maximum gate drive preserves gate insulation integrity

Applications

• Suitable for high-voltage power supplies and converters • Ideal for motor-drive inverter stages in industrial controls • Used for switch-mode power electronics and converters • Can be used for medium-power PFC and boost regulator designs

What temperature range can it reliably operate within?

It is specified to function between -55°C and 150°C, accommodating cold-start and elevated-temperature environments.

How is the device mounted in typical assemblies?

It is supplied in a through-hole TO-247AC package with three pins for secure board attachment and heat-sink mounting.

What gate-drive constraints should designers observe?

The gate-to-source voltage must not exceed 30V to avoid damaging the gate dielectric.

Are there any handling considerations for thermal management?

The 78W dissipation figure requires appropriate heat-sinking and thermal-interface practices to maintain junction temperatures within specified limits.

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