Vishay SI3122DV N-Channel MOSFET, 1.3 A, 100 V, 6-Pin PowerPAK SI3122DV-T1-GE3

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Subtotal (1 reel of 3000 units)*

£471.00

(exc. VAT)

£564.00

(inc. VAT)

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  • 6,000 unit(s) shipping from 10 October 2025
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Units
Per unit
Per Reel*
3000 +£0.157£471.00

*price indicative

RS Stock No.:
653-088
Mfr. Part No.:
SI3122DV-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

100 V

Series

SI3122DV

Package Type

PowerPAK

Mounting Type

Surface Mount

Pin Count

6

Channel Mode

Enhancement

Transistor Material

Si

Number of Elements per Chip

1

COO (Country of Origin):
CN
The Vishay N-channel MOSFET designed for high-efficiency switching in compact power systems. It supports up to 100 V drain-source voltage. Packaged in a TSOP-6 format, it utilizes TrenchFET Gen IV technology to deliver low RDS(on), fast switching, and efficient thermal performance in space-constrained designs.

Pb Free
Halogen free
RoHS compliant
Used in LED backlighting

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