Microchip 2N6660 N-Channel MOSFET, 410 mA, 60 V, 3-Pin TO-39 2N6660
- RS Stock No.:
- 649-369
- Mfr. Part No.:
- 2N6660
- Brand:
- Microchip
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£16.40
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£19.68
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- 500 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 - 4 | £16.40 |
| 5 + | £15.91 |
*price indicative
- RS Stock No.:
- 649-369
- Mfr. Part No.:
- 2N6660
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 410 mA | |
| Maximum Drain Source Voltage | 60 V | |
| Series | 2N6660 | |
| Package Type | TO-39 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type N | ||
Maximum Continuous Drain Current 410 mA | ||
Maximum Drain Source Voltage 60 V | ||
Series 2N6660 | ||
Package Type TO-39 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- TH
The Microchip N-Channel, Enhancement-Mode (normally-off) transistor that utilizes a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This com-binational produces a device with the power-handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low Ciss and fast switching speeds
Excellent thermal stability
Low power drive requirement
Ease of paralleling
Low Ciss and fast switching speeds
Excellent thermal stability
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