STMicroelectronics STO60 Silicon N-Channel MOSFET, 55 A, 600 V, 8-Pin TO-LL package STO60N045DM9

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£7.11

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£8.53

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1 - 9£7.11
10 - 99£6.40
100 - 499£5.90
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RS Stock No.:
358-979
Mfr. Part No.:
STO60N045DM9
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

55 A

Maximum Drain Source Voltage

600 V

Package Type

TO-LL package

Series

STO60

Mounting Type

Surface Mount

Pin Count

8

Number of Elements per Chip

1

Transistor Material

Silicon

COO (Country of Origin):
MY
The STMicroelectronics N-channel Power MOSFET is based on the most innovative super-junction MDmesh DM9 technology, suitable for medium/high voltage MOSFETs. The silicon-based DM9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The diode featuring very low recovery charge (Qrr), time (trr) and RDS(on) makes this fast-switching super-junction Power MOSFET tailored for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Fast recovery body diode
Very low FOM
Low input capacitance and resistance
100 percent avalanche tested
Extremely high dv by dt ruggedness

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