STMicroelectronics STO60 Silicon N-Channel MOSFET, 55 A, 600 V, 8-Pin TO-LL package STO60N045DM9
- RS Stock No.:
- 358-979
- Mfr. Part No.:
- STO60N045DM9
- Brand:
- STMicroelectronics
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Subtotal (1 unit)*
£7.11
(exc. VAT)
£8.53
(inc. VAT)
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- Shipping from 23 February 2026
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Units | Per unit |
|---|---|
| 1 - 9 | £7.11 |
| 10 - 99 | £6.40 |
| 100 - 499 | £5.90 |
| 500 - 999 | £5.47 |
| 1000 + | £4.91 |
*price indicative
- RS Stock No.:
- 358-979
- Mfr. Part No.:
- STO60N045DM9
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 55 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-LL package | |
| Series | STO60 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Silicon | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 55 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-LL package | ||
Series STO60 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Number of Elements per Chip 1 | ||
Transistor Material Silicon | ||
- COO (Country of Origin):
- MY
The STMicroelectronics N-channel Power MOSFET is based on the most innovative super-junction MDmesh DM9 technology, suitable for medium/high voltage MOSFETs. The silicon-based DM9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The diode featuring very low recovery charge (Qrr), time (trr) and RDS(on) makes this fast-switching super-junction Power MOSFET tailored for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Fast recovery body diode
Very low FOM
Low input capacitance and resistance
100 percent avalanche tested
Extremely high dv by dt ruggedness
Very low FOM
Low input capacitance and resistance
100 percent avalanche tested
Extremely high dv by dt ruggedness
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