STMicroelectronics N-Channel MOSFET, 46 A, 600 V, 8-Pin TO-LL Type A2 STO65N60DM6
- RS Stock No.:
- 228-3052
- Mfr. Part No.:
- STO65N60DM6
- Brand:
- STMicroelectronics
Subtotal (1 reel of 1800 units)*
£6,030.00
(exc. VAT)
£7,236.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 01 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
---|---|---|
1800 + | £3.35 | £6,030.00 |
*price indicative
- RS Stock No.:
- 228-3052
- Mfr. Part No.:
- STO65N60DM6
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 46 A | |
Maximum Drain Source Voltage | 600 V | |
Package Type | TO-LL Type A2 | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 0.076 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4.75V | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 46 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-LL Type A2 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.076 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.75V | ||
Number of Elements per Chip 1 | ||
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Excellent switching performance thanks to the extra driving source pin
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Excellent switching performance thanks to the extra driving source pin
Related links
- STMicroelectronics N-Channel MOSFET 600 V, 8-Pin TO-LL Type A2 STO65N60DM6
- onsemi SupreMOS N-Channel MOSFET 600 V, 3-Pin TO-247 FCH47N60NF
- STMicroelectronics STP50N60DM6 N-Channel MOSFET 600 V, 8-Pin TO-LL-HV STP50N60DM6
- STMicroelectronics STO60 Silicon N-Channel MOSFET 600 V, 8-Pin TO-LL package STO60N030M9
- STMicroelectronics STO60 Silicon N-Channel MOSFET 600 V, 8-Pin TO-LL package STO60N045DM9
- STMicroelectronics STripFET F7 N-Channel MOSFET 60 V, 8-Pin TO-LL STO450N6F7
- Microchip SiC N-Channel MOSFET 1200 V TO-247 MSC040SMA120B
- Infineon HEXFET N-Channel MOSFET 250 V TO-220AB IRFB4229PBF