STMicroelectronics STP50N60DM6 N-Channel MOSFET, 36 A, 600 V, 8-Pin TO-LL-HV STP50N60DM6

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 2 units)*

£9.97

(exc. VAT)

£11.964

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 29 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
2 - 8£4.985£9.97
10 - 18£4.24£8.48
20 +£4.14£8.28

*price indicative

Packaging Options:
RS Stock No.:
206-8634
Mfr. Part No.:
STP50N60DM6
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

36 A

Maximum Drain Source Voltage

600 V

Package Type

TO-LL-HV

Series

STP50N60DM6

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.75V

Number of Elements per Chip

1

Transistor Material

Si

The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected

Related links